isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on): 44mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

文件：371.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：335.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：335.75 Kbytes 页数：2 Pages

ISC

无锡固电

extremely low losses due to very low fom rdson qg and eoss

文件：1.13537 Mbytes 页数：15 Pages

Infineon

英飞凌