OptiMOS ™低压功率 MOSFET - 完美满足充电器和适配器设计的需求

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Infineon

英飞凌

丝印：0602NL；Package：PG-TSDSON-8FL；OptiMOSTM5 Power-Transistor, 80 V

文件：1.2081 Mbytes 页数：11 Pages

INFINEON

英飞凌

N-CHANNEL MOSFET FOR SWITCHING

Description The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

文件：217.59 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.39 Kbytes 页数：2 Pages

ISC

无锡固电

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

文件：154.18 Kbytes 页数：3 Pages

LITTELFUSE

力特