OptiMOS ™低压功率 MOSFET - 完美满足充电器和适配器设计的需求

\n优势:\n• Short lead times\n• Quick quote response\n• Highest efficiency and power density designs\n• Compact, lightweight and environmentally friendly products\n• Excellent price-performance ratio;

Infineon

英飞凌

丝印：0702NL；Package：PG-TSDSON-8FL；OptiMOSTM5 Power-Transistor, 60 V

文件：1.20529 Mbytes 页数：11 Pages

INFINEON

英飞凌

SMT Power Inductors

文件：350.79 Kbytes 页数：2 Pages

PULSE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：350.04 Kbytes 页数：2 Pages

ISC

无锡固电

Pushbutton switch, side actuation, illumination

文件：976.56 Kbytes 页数：2 Pages

APEX-ELECTRONICS