丝印：17315N6；Package：PG-TSDSON-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.1209 Mbytes 页数：11 Pages

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OptiMOS ™ 6 功率 MOSFET 150 V 正常电平，采用 SuperSO8 封装

OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package • 42% lower RDS(on) than OptiMOS™ 5\n• 20% lower FOMg than OptiMOS™ 5\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• Max Tj of 175°C\n\n优势:\n• Low conduction and switching losses\n• Stable operat;

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英飞凌