N-Channel MOSFET Transistor

文件：339.31 Kbytes 页数：2 Pages

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Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：304.59 Kbytes 页数：14 Pages

INFINEON

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：594.28 Kbytes 页数：14 Pages

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英飞凌

Isc N-Channel MOSFET Transistor

文件：270.25 Kbytes 页数：2 Pages

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无锡固电