N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perfor

文件：339.04 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.47 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.83839 Mbytes 页数：15 Pages

Infineon

英飞凌