N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

文件：339.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

文件：339.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • Improved Transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤380mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.99 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：365.73 Kbytes 页数：13 Pages

INFINEON

英飞凌

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：2.01852 Mbytes 页数：14 Pages

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英飞凌