N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.75Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：339.24 Kbytes 页数：2 Pages

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CoolMOSTM Power Transistor

文件：227.83 Kbytes 页数：11 Pages

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CoolMOS Power Transistor

CoolMOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dtrated • Improved transconductance • Fully isolated packag

文件：202.31 Kbytes 页数：10 Pages

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Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

文件：260.769 Kbytes 页数：2 Pages

ISC

无锡固电