ISPP08N80C3

N-Channel MOSFET Transistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

SPA08N80C3

CoolMOSTMPowerTransistor

SPA08N80C3

CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability

SPA08N80C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPA08N80C3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

SPI08N80C3

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

SPI08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances

SPP08N80C3

CoolMOSTMPowerTransistor

SPP08N80C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

SPP08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology