N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.65Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

文件：339.39 Kbytes 页数：2 Pages

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CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

文件：338.85 Kbytes 页数：10 Pages

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Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：252.67 Kbytes 页数：12 Pages

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CoolMOSTM Power Transistor

文件：478.87 Kbytes 页数：10 Pages

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