首页 >ISL70024SEH>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ISL70024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo 文件：512.87 Kbytes 页数：13 Pages | RENESAS 瑞萨 | RENESAS | |
ISL70024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) 文件：477.53 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | |
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) 文件：477.53 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo 文件：512.87 Kbytes 页数：13 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) 文件：477.53 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo 文件：512.87 Kbytes 页数：13 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) 文件：477.53 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo 文件：512.87 Kbytes 页数：13 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo 文件：512.87 Kbytes 页数：13 Pages | RENESAS 瑞萨 | RENESAS | ||
200V, 7.5A Enhancement Mode GaN Power Transistor Features ▪ Very low rDS(ON) 45mΩ (typical) ▪ Ultra low total gate charge 2.5nC (typical) ▪ SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg(Si) ▪ ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) 文件：477.53 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS |
技术参数
- IDS (A)：
7.5
- VGS(TH) (Max) (V)：
2.5
- VGS (Max) (V)：
6
- RDSON (Typ) (mΩ)：
45
- QG (nC) typ (nC)：
14
- Thermal Resistance θJC (°C/W)：
18.7
- High Dose Rate (HDR) (krad (Si))：
100
- Low Dose Rate (LDR) (krad (Si))：
75
- Lead Count (#)：
4
- Pkg. Type：
CLCC
- Temp. Range：
-55 to 125°C
- Qualification Level：
Modified Class V
- Models Available：
SPICE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL/美国英特矽尔 |
23+ |
表贴 |
5000 |
公司只做原装,可配单 |
询价 | ||
RENESAS |
26+ |
SOP |
6000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
RENESAS |
25+ |
SOP |
15000 |
瑞萨全系列在售,大代理渠道直供 |
询价 | ||
Intersil |
18+ |
N/A |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
INTERSI |
26+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
INTERSI |
2016+ |
CDIP-8 |
250 |
原装正品,诚信经营 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
INTERSIL |
2016+ |
TSOP-5 |
6000 |
全新原装现货,量大价优,公司可售样! |
询价 | ||
Intersil |
24+ |
64-TQFP-EP(10x10) |
65200 |
一级代理/放心采购 |
询价 | ||
Intersil |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
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