ISL70024SEHLSLASHPROTO中文资料瑞萨数据手册PDF规格书

厂商型号	ISL70024SEHLSLASHPROTO
功能描述	200V, 7.5A Enhancement Mode GaN Power Transistor
文件大小	477.53 Kbytes
页面数量	14 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-11 22:58:00
人工找货	ISL70024SEHLSLASHPROTO价格和库存，欢迎联系客服免费人工找货

特性 Features

▪ Very low rDS(ON) 45mΩ (typical)

▪ Ultra low total gate charge 2.5nC (typical)

▪ SEE hardness (see SEE report for details)

• SEL/SEB LETTH (VDS = 160V, VGS = 0V):

86MeV•cm2/mg(Si)

▪ ISL70024SEH radiation acceptance (see TID

report)

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ ISL73024SEH radiation acceptance (see TID

report)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

• Package area: 42mm2

▪ Full military-temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

▪ Qualified to Renesas Rad Hard GaN FET

Screening and QCI Flow (R34TB0003EU)

• All screening and QCI is in accordance with

MIL-PRF-38535L Class-V