isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Recommend for 60W audio freque

文件：275.79 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

文件：122.36 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

文件：119.81 Kbytes 页数：12 Pages

PHI

PHI

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)

文件：150.5 Kbytes 页数：6 Pages

POINN