isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：358.23 Kbytes 页数：2 Pages

ISC

无锡固电

Excellent package for good heat dissipation.

文件：617.78 Kbytes 页数：4 Pages

KERSEMI

LF451 Wide-Bandwidth JFET-Input Operational Amplifier

文件：207.06 Kbytes 页数：8 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LF451 Wide-Bandwidth JFET-Input Operational Amplifier

文件：207.06 Kbytes 页数：8 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司