isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(sus)= -100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat) = -2.0 V (Max) @ IC = -5A ·Complement to Type ISCP392P ·Minimum Lot-to-Lot variations for robust device performance and

文件：301.36 Kbytes 页数：2 Pages

ISC

无锡固电

R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 页数：1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Dual Inductor

文件：20.99 Kbytes 页数：1 Pages

RHOMBUS-IND

Low Power Operational Amplifier/Voltage Comparator

文件：98.88 Kbytes 页数：6 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司