丝印：D2PAK；Package：TO-263；iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =15.5mΩ (MAX) • Enhancement mode: Vth = 2.5 to 4.5V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：322.34 Kbytes 页数：2 Pages

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