ISA1602AM1TR

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISA1235AC1ISA1602AM1issuperminipackageresinsealedsiliconPNPepitaxialtypetransistor. Thesearedesignedforlowfrequencyvoltageamplifyapplication. FEATURE ◾ExcellentlinearityofDCforwardcurrentgain. ◾Smallcollectortoemittersaturationvoltage VCE(sat)

ISA1603AM1

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISA1530AC1ISA1603AM1issuperminipackageresinsealedsiliconPNPepitaxialtypetransistor. Thesearedesignedforlowfrequencyvoltageamplifyapplication. FEATURE •ExcellentlinearityofDCforwardcurrentgain. •Smallcollectortoemittersaturationvoltage VCE(sat)

ISA1603AM1TR

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISA1530AC1ISA1603AM1issuperminipackageresinsealedsiliconPNPepitaxialtypetransistor. Thesearedesignedforlowfrequencyvoltageamplifyapplication. FEATURE •ExcellentlinearityofDCforwardcurrentgain. •Smallcollectortoemittersaturationvoltage VCE(sat)

ISA170170N04LMDS

丝印：1717N04L；Package：PG-DSO-8；MOSFET OptiMOS™ 3 Power‑Transistor, 40 V

Features •DualN‑channel,logiclevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

ISA170230C04LMDS

丝印：1723C04L；Package：PG-DSO-8；MOSFET OptiMOS™ 3 Power‑Transistors, 40 V

Features •ComplementaryN‑andP‑channel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

ISA1989AU1

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISA1989AU1isaultrasuperminipackageresinsealedsiliconPNPepitaxialtransistor. Itisdesignedforlowfrequencyvoltageapplication. APPLICATION ForHybridIC,smalltypemahcinelowfrequencyvoltageAmplifyapplication.

ISA1993AS1

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISA1993AS1isminipackageresinsealedsiliconPNPepitaxialtransistor. Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=max-0.3V（@Ic=-100mA、IB=-10mA） ●ExcellentlinearityofDCforwardgain. ●Supermi

ISA2191AT2

Transistor

DESCRIPTION ISA2191AT2isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyapplication. Sinceitisasuper-thinflatleadtypepackage,ahigh-densitymountingarepossible. FEATURE ●Super-thinflatleadtypepackage.t=0.5mm ●Excellentli

ISA220280C03LMDS

丝印：2228C03L；Package：PG-DSO-8；MOSFET OptiMOS™ 3 Power‑Transistors, 30 V

Features •ComplementaryN‑andP‑channel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

ISA250250N04LMDS

丝印：2525N04L；Package：PG-DSO-8；MOSFET OptiMOS™ 3 Power‑Transistor, 40 V

Features •DualN‑channel,logiclevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21