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IS62WV51216BLL

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-45B

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55BI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55BLI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55TI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-55TLI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL-70XI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

文件:129.24 Kbytes 页数:16 Pages

ISSI

矽成半导体

IS62WV51216BLL

PowerSaver™ Lower Power Asynchronous SRAM

ISSI

矽成半导体

IS62WV51216BLL-55BLI

静态随机存储器(SRAM)

Integrated Silicon Solution

Integrated Silicon Solution

IS62WV51216BLL-55BI-TR

Package:48-TFBGA;包装:托盘 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

技术参数

  • Organization:

    512Kx16

  • Power Supply:

    3

  • Speed (ns):

    45

  • Package Pins:

    BGA(48)

  • Temperature Grade:

    C

  • Status:

    Prod

供应商型号品牌批号封装库存备注价格
BGA
259
询价
N/A
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ISSI
23+
TSOP-
8000
专注配单,只做原装进口现货
询价
ISSI
23+
TSOP-
7000
询价
2026+
原厂原封可拆样
54648
百分百原装现货 实单必成 欢迎询价
询价
ISSI(美国芯成)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
ISSI
23+
48-迷你型BGA(6x8)
71890
专业分销产品!原装正品!价格优势!
询价
ISSI
17+
.
6200
100%原装正品现货
询价
ISSI?
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
ISSI
24+
TSOP
5000
原装现货假一罚十
询价
更多IS62WV51216BLL供应商 更新时间2026-2-3 8:01:00