512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compa

文件：257.75 Kbytes 页数：19 Pages

ISSI

矽成半导体

512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：177.52 Kbytes 页数：19 Pages

ISSI

矽成半导体

512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compa

文件：257.75 Kbytes 页数：19 Pages

ISSI

矽成半导体

512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：177.52 Kbytes 页数：19 Pages

ISSI

矽成半导体

512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件：177.52 Kbytes 页数：19 Pages

ISSI

矽成半导体

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 16MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc