128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD (IS61/64WV12816FALL) – 2.4V-3.6V VDD (IS61/64WV12816FBLL)  Three state outputs  Data Control for upper and l

文件：642.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD (IS61/64WV12816FALL) – 2.4V-3.6V VDD (IS61/64WV12816FBLL)  Three state outputs  Data Control for upper and l

文件：642.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD (IS61/64WV12816FALL) – 2.4V-3.6V VDD (IS61/64WV12816FBLL)  Three state outputs  Data Control for upper and l

文件：642.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD (IS61/64WV12816FALL) – 2.4V-3.6V VDD (IS61/64WV12816FBLL)  Three state outputs  Data Control for upper and l

文件：642.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support\n

ISSI

矽成半导体