128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support • Lead-free

文件：516 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件：830.89 Kbytes 页数：16 Pages

ISSI

矽成半导体

128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support • Lead-free

文件：516 Kbytes 页数：15 Pages

ISSI

矽成半导体

256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件：830.89 Kbytes 页数：16 Pages

ISSI

矽成半导体

256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件：830.89 Kbytes 页数：16 Pages

ISSI

矽成半导体