128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD (IS61/64WV12816FALL) – 2.4V-3.6V VDD (IS61/64WV12816FBLL)  Three state outputs  Data Control for upper and l

文件：642.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

FEATURES  High-speed access time: 8, 10ns, 12ns  Low Active Current: 35mA (Max., 10ns, I-temp)  Low Standby Current: 10 mA (Max., I-temp)  Single power supply – 1.65V-2.2V VDD (IS61/64WV12816FALL) – 2.4V-3.6V VDD (IS61/64WV12816FBLL)  Three state outputs  Data Control for upper and l

文件：642.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

TSOPII-44

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

BGA

ISSI

矽成半导体

上传：深圳市旺财半导体有限公司

TS0P44

ISSI

矽成半导体

上传：深圳市纳艾斯科技有限公司