128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件：272.47 Kbytes 页数：21 Pages

ISSI

矽成半导体

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件：272.47 Kbytes 页数：21 Pages

ISSI

矽成半导体

静态随机存储器(SRAM)

Integrated Silicon Solution

Package：44-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 2MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc