首页>IS61WV12816DBLL-10TLI>规格书详情
IS61WV12816DBLL-10TLI集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
IS61WV12816DBLL-10TLI |
参数属性 | IS61WV12816DBLL-10TLI 封装/外壳为44-TSOP(0.400",10.16mm 宽);包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC SRAM 2MBIT PARALLEL 44TSOP II |
功能描述 | 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
文件大小 |
272.47 Kbytes |
页面数量 |
21 页 |
生产厂商 | Integrated Silicon Solution Inc |
企业简称 |
ISSI【ISSI公司】 |
中文名称 | ISSI有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-4-29 22:30:00 |
相关芯片规格书
更多- IS61WV12816BLL-12TI
- IS61WV12816BLL-12BI
- IS61WV12816BLL-12BLI
- IS61WV12816BLL
- IS61WV12816BLL-12TLI
- IS61WV12816DALL
- IS61WV12816DALL-20BI
- IS61WV12816DBLL
- IS61WV12816DBLL-10BI
- IS61WV12816DBLL-10BLI
- IS61WV12816DALL-20TI
- IS61WV12816DBLL-10TL
- IS61WV12816DBLL-10TI
- IS61WV10248BLL-10MLI
- IS61WV10248ALL
- IS61WV10248ALL-20MI
- IS61WV12816DALL_11
- IS61WV10248BLL-10MI
IS61WV12816DBLL-10TLI规格书详情
DESCRIPTION
TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
HIGH SPEED: (IS61/64WV12816DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 μW (typical) CMOS standby
LOW POWER: (IS61/64WV12816DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 μW (typical) CMOS standby
• Single power supply
— VDD 1.65V to 2.2V (IS61WV12816DAxx)
— VDD 2.4V to 3.6V (IS61/64WV12816DBxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available
IS61WV12816DBLL-10TLI属于集成电路(IC) > 存储器。ISSI有限公司制造生产的IS61WV12816DBLL-10TLI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
IS61WV12816DBLL-10TLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 异步
- 存储容量:
2Mb(128K x 16)
- 存储器接口:
并联
- 写周期时间 - 字,页:
10ns
- 电压 - 供电:
3V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
44-TSOP(0.400",10.16mm 宽)
- 供应商器件封装:
44-TSOP II
- 描述:
IC SRAM 2MBIT PARALLEL 44TSOP II
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
2020+ |
TSOP |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ISSI |
24+ |
TSOP44 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ISSI |
23+ |
NA/ |
4545 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ISSI(美国芯成) |
23+ |
TSOPII44 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ISSI |
21+ |
TSSOP |
9852 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ISSI(美国芯成) |
23+ |
TSOP4410.2mm |
6000 |
询价 | |||
ISSI |
22+ |
TSOP44 |
30000 |
只做原装正品 |
询价 | ||
ISSI/芯成 |
23+ |
TSOP44 |
1578 |
水星电子只做原装,支持一站式BOM配单。 |
询价 | ||
ISSI |
24+ |
TSOP44 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ISSI/芯成 |
22+ |
TSSOP |
35 |
本公司只做原装正品,优势供货渠道!量大可订! |
询价 |