IS61WV12816DALL中文资料矽成半导体数据手册PDF规格书

DESCRIPTION

TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

• High-speed access time: 8, 10, 12, 20 ns

• Low Active Power: 135 mW (typical)

• Low Standby Power: 12 μW (typical) CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 55 mW (typical)

• Low Standby Power: 12 μW (typical) CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV12816DAxx)

— VDD 2.4V to 3.6V (IS61/64WV12816DBxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available