IS61WV102416FBLL资料使用说明书库存现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61WV102416FBLL	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10B2I	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10B2LI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10B3LI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10B4LI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10BI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10BLI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10T2LI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-10TLI	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS61WV102416FBLL-8B2I	文件：716.66 Kbytes Page：19 Pages	1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB 文件：716.66 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IS61WV102416FBLL	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
深圳市欧亚佳电子有限公司	IS61WV102416FBLL-10TLI	ISSI	20+	TSSOP48	11520	特价全新原装公司现货	询价
深圳市斌腾达科技有限公司	IS61WV102416FBLL-10BLI	ISSI, Integrated Silicon Solut	21+	60-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61WV102416FBLL-8TLI	ISSI, Integrated Silicon Solut	24+	48-TSOP I	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61WV102416FBLL-10TLI-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS61WV102416FBLL-10BLI	ISSI(美国芯成)	2447	TFBGA-48(6x8)	315000	480个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS61WV102416FBLL-10TLI-TR	ISSI	25+	IC	1500	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	IS61WV102416FBLL-8TLI-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS61WV102416FBLL-10TLI	ISSI(美国芯成)	2021+	TSOPI-48	499		询价
深圳市威尔健半导体有限公司	IS61WV102416FBLL-8BLI	ADI/亚德诺	23+	BGA	50000	全新原装正品现货,支持订货	询价

更多IS61WV102416FBLL供应商更新时间2025-12-23 17:29:00

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