1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

TTL compatible inputs and outputs

文件：814.25 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

High Speed Low Power Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support\n

ISSI

矽成半导体