IS61WV10248EDBLL-8BLI数据手册库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61WV10248EDBLL-8BLI	文件：522.82 Kbytes Page：18 Pages	1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat 文件：522.82 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS61WV10248EDBLL-8TLI	文件：522.82 Kbytes Page：18 Pages	1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat 文件：522.82 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS61WV20488BLL-10TLI	文件：0 bytes Page：0 Pages	TSOPII-44	ISSI(美国芯成) 上传：深圳市宇创芯科技有限公司	ISSI(美国芯成)
IS61WV20488FBLL-10BLI	文件：0 bytes Page：0 Pages	BGA	ISSI 矽成半导体上传：深圳市旺财半导体有限公司	ISSI
IS61WV25616BLL-10BLI	文件：0 bytes Page：0 Pages	TS0P44	ISSI 矽成半导体上传：深圳市纳艾斯科技有限公司	ISSI

更多IS61WV10248EDBLL-8BLI供应商更新时间2025-11-24 18:09:00