1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体

1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compat

文件：522.82 Kbytes 页数：18 Pages

ISSI

矽成半导体