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IS61WV12816DBLL

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件:272.47 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL-10BI

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件:272.47 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL-10BLI

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件:272.47 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL-10TI

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件:272.47 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL-10TL

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件:272.47 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL-10TLI

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件:272.47 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL/DBLS

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:201.17 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLLSLASHDBLS

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件:201.17 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV12816DBLL-10BLI

静态随机存储器(SRAM)

Integrated Silicon Solution

Integrated Silicon Solution

IS61WV12816DBLL-10BLI-TR

Package:48-TFBGA;包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC SRAM 2MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

详细参数

  • 型号:

    IS61WV12816DBLL

  • 功能描述:

    静态随机存取存储器 2M(128Kx16) 10ns Async 静态随机存取存储器 3.3v

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
ISSI
2320+
TSOP44
5000
只做原装,特价清货!
询价
ISSI
TSOP44
151
正品原装--自家现货-实单可谈
询价
ISSI
23+
标准
5000
原装正品,假一罚十
询价
ISSI
17+
TSOP
6200
100%原装正品现货
询价
ISSI
25+
TSOP44
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI
24+
SMD
15600
静态随机存取存储器2M(128Kx16)10nsAsync静态随机存取
询价
ISSI
23+
TSOP44
8560
受权代理!全新原装现货特价热卖!
询价
ISSI
25+23+
TSOP
28061
绝对原装正品全新进口深圳现货
询价
ISSI
20+
TSOP
2960
诚信交易大量库存现货
询价
ISSI, Integrated Silicon Solut
21+
4-XFBGA,WLCSP
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
更多IS61WV12816DBLL供应商 更新时间2025-12-14 15:09:00