128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

文件：564.83 Kbytes 页数：14 Pages

ISSI

矽成半导体

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

文件：564.83 Kbytes 页数：14 Pages

ISSI

矽成半导体

TSOPII-44

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

BGA

ISSI

矽成半导体

上传：深圳市旺财半导体有限公司

TS0P44

ISSI

矽成半导体

上传：深圳市纳艾斯科技有限公司