IS61WV12816EDBLL-10BLI中文资料矽成半导体数据手册PDF规格书

FEATURES

• High-speed access time: 8, 10 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical)

CMOS standby

• Single power supply

— Vdd 2.4V to 3.6V (10 ns)

— Vdd 3.3V ± 10% (8 ns)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

• Error Detection and Error Correction