1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB

文件：716.66 Kbytes 页数：19 Pages

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES  High-speed access time: 8ns, 10ns, 20ns  High- performance, low power CMOS process  Multiple center power and ground pins for greater noise immunity  TTL compatible inputs and outputs  Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB

文件：716.66 Kbytes 页数：19 Pages

ISSI

矽成半导体

TSOPII-44

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

BGA

ISSI

矽成半导体

上传：深圳市旺财半导体有限公司

TS0P44

ISSI

矽成半导体

上传：深圳市纳艾斯科技有限公司