IS61NLP12836B资料datasheet下载供应代理-114ic电子网

首页 >IS61NLP12836B>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61NLP12836B	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200B2	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200B2I	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200B2LI	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200B3	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200B3I	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200TQ	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200TQI	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-200TQLI	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61NLP12836B-250B2	文件：528.09 Kbytes Page：29 Pages	128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM DESCRIPTION The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K 文件：528.09 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI

技术参数

Organization：
128Kx36
Product Type：
No-Wait Pipeline
VccQ：
2.5V/3.3V
Speed (MHz)：
250200
tKQ(ns)：
2.6
Package Pins：
BGA(119)
Temperature Grade：
C
Status：
Prod

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	IS61NLP12836B-200B2LI-TR	ISSI	23+	119-BGA(14x22)	1389	专业分销产品!原装正品!价格优势!	询价
深圳市卓越微芯电子有限公司	IS61NLP12836B-200TQLI	ISSI	25+	QFP	138	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市振宏微科技有限公司	IS61NLP12836B-200TQL	ISSI	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价
深圳市华斯顿科技有限公司	IS61NLP12836B-200TQLI	ISSI	25+23+	TQFP100	20414	绝对原装正品全新进口深圳现货	询价
深圳市赛尔通科技有限公司	IS61NLP12836B-200TQL	ISSI	23+	100-TQFP	65480		询价
深圳市斌腾达科技有限公司	IS61NLP12836B-200B2LI-TR	ISSI, Integrated Silicon Solut	21+	48-VFBGA,CSBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61NLP12836B-200B2LI-TR	ISSI, Integrated Silicon Solut	24+	119-PBGA(14x22)	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS61NLP12836B-200TQLI-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS61NLP12836B-200TQLI	ISSI(美国芯成)	2447	TQFP-100(14x20)	315000	72个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS61NLP12836B-200B2LI-TR	ISSI	25+	BGA-119	1001	就找我吧!--邀您体验愉快问购元件!	询价

更多IS61NLP12836B供应商更新时间2025-10-7 16:31:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号