32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

文件：366.8 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

文件：366.8 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

文件：366.8 Kbytes 页数：14 Pages

ISSI

矽成半导体