DESCRIPTION

The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

FEATURES

• High-speed access time: 12 ns

• Low Active Power: 175 mW (typical)

• Low Standby Power: 1 mW (typical) CMOS standby

• TTL compatible interface levels

• Single 5V ± 10 power supply

• Fully static operation: no clock or refresh required

• Available in 44-pin SOJ package and 44-pin TSOP (Type II)

• Commercial and Industrial temperature ranges available

• Lead-free available

IS61C3216AL属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS61C3216AL存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。