256Mx8, 128Mx16 2Gb DDR3 SDRAM

FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 933 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture

文件：3.60228 Mbytes 页数：82 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体