FEATURES

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

• High speed data transfer rates with system frequency up to 933 MHz

• 8 internal banks for concurrent operation

• 8n-Bit pre-fetch architecture

• Programmable CAS Latency

• Programmable Additive Latency: 0, CL-1,CL-2

• Programmable CAS WRITE latency (CWL) based on tCK

• Programmable Burst Length: 4 and 8

• Programmable Burst Sequence: Sequential or Interleave

• BL switch on the fly

• Auto Self Refresh(ASR)

• Self Refresh Temperature(SRT)

• Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

• Partial Array Self Refresh

• Asynchronous RESET pin

• TDQS (Termination Data Strobe) supported (x8 only)

• OCD (Off-Chip Driver Impedance Adjustment)

• Dynamic ODT (On-Die Termination)

• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

• Write Leveling

• Up to 200 MHz in DLL off mode

• Operating temperature:

Commercial (TC = 0°C to +95°C)

Industrial (TC = -40°C to +95°C)

Automotive, A1 (TC = -40°C to +95°C)

Automotive, A2 (TC = -40°C to +105°C)

IS43TR16128A属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS43TR16128A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。