256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

256Mx8, 128Mx16 2Gb DDR3 SDRAM

文件：3.39371 Mbytes 页数：81 Pages

ISSI

矽成半导体

DDR3 SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support\n

ISSI

矽成半导体

DDR3 SDRAM

·Bidirectional differential data strobe\n·Data masking per byte on Write commands\n·Programmable burst length of 4 or 8\n·Programmable CAS Latency\n·Auto-Refresh and Self-Refresh Modes\n·OCD (Driver Adjustment)\n·ODT (On Die Termination) supported\n·Write Leveling\n·Long-term support\n

ISSI

矽成半导体

动态随机存储器(DRAM)

Integrated Silicon Solution

Package：96-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

Package：96-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 2GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc