IS42S16800B数据手册ISSI中文资料规格书

描述 Description

OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.FEATURES
• Clock frequency: 167, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
                   VDD                VDDQ
IS42S81600B   3.3V                  3.3V
IS42S16800B   3.3V                  3.3V
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial Temperature Availability
• Lead-free Availability

特性 Features

• Clock frequency: 167, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
                   VDD                VDDQ
IS42S81600B   3.3V                  3.3V
IS42S16800B   3.3V                  3.3V
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial Temperature Availability
• Lead-free Availability