IS42S16400B-6TL中文资料1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM数据手册ISSI规格书

描述 Description

OVERVIEW
ISSI's 64Mb Synchronous DRAM IS42S16400B is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CASlatency (2, 3 clocks)
• Burst read/write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Industrial temperature availability
• Package:400-mil 54-pin TSOP II
• Lead-free package is available

特性 Features

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CASlatency (2, 3 clocks)
• Burst read/write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Industrial temperature availability
• Package:400-mil 54-pin TSOP II
• Lead-free package is available