IS42S16128中文资料128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM数据手册ISSI规格书

描述 Description

DESCRIPTION
ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES
• Clock frequency: 125 MHz, 100 MHz, 83 MHz
• Two banks can be operated simultaneously and independently
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 1K refresh cycles every 16 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II

特性 Features

• Clock frequency: 125 MHz, 100 MHz, 83 MHz
• Two banks can be operated simultaneously and independently
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 1K refresh cycles every 16 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II