128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：638.47 Kbytes 页数：75 Pages

ISSI

矽成半导体

128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION\nISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES\n• Clo • Clock frequency: 125 MHz, 100 MHz, 83 MHz\n• Two banks can be operated simultaneously and independently\n• Single 3.3V power supply\n• LVTTL interface\n• Programmable burst length – (1, 2, 4, 8, full page)\n• Programmable burst sequence: Sequential/Interleave\n• Auto refresh, self refresh\n• 1K re;

ISSI

矽成半导体

128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：638.47 Kbytes 页数：75 Pages

ISSI

矽成半导体

128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：638.47 Kbytes 页数：75 Pages

ISSI

矽成半导体

128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：638.47 Kbytes 页数：75 Pages

ISSI

矽成半导体