16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

文件：563.68 Kbytes 页数：60 Pages

ISSI

矽成半导体

16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM

OVERVIEW\nISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.FEATURES\n• Clock frequency: 167, 143, 133 MHz\n• Fully synchronous; all signals r • Clock frequency: 167, 143, 133 MHz\n• Fully synchronous; all signals referenced to a positive clock edge\n• Internal bank for hiding row access/precharge\n• Power supply\n                   VDD                VDDQ\nIS42S81600B   3.3V                  3.3V\nIS42S16800B   3.3V                  3.3V\;

ISSI

矽成半导体