首页 >IS41LV16400>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IS41LV16400 | 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI | |
IS41LV16400 | 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSI 矽成半导体 | ISSI | |
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI | ||
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI | ||
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI | ||
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI | ||
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI | ||
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages | ISSI 矽成半导体 | ISSI |
详细参数
- 型号：
IS41LV16400
- 制造商：
ISSI
- 制造商全称：
Integrated Silicon Solution, Inc
- 功能描述：
4Mx16(64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISS |
23+ |
NA |
822 |
专做原装正品,假一罚百! |
询价 | ||
ISSI |
23+ |
TSOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ISSI |
24+ |
QFP |
36520 |
一级代理/放心采购 |
询价 | ||
ISSI |
23+ |
QFP |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
ISSI |
24+/25+ |
50 |
原装正品现货库存价优 |
询价 | |||
ISSI |
2447 |
QFP100 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ISSI |
2023+环保现货 |
进口原装,热卖库存 |
2500 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
ISSI |
26+ |
QFP100 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
ISSI |
99+ |
QFP |
150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ISSI |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
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相关库存
更多- IS41LV16400-50TE
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- IS41LV82052-50T
- IS41LV82052-60J
- IS41LV82052-60T
