4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

文件：163.37 Kbytes 页数：21 Pages

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

文件：163.37 Kbytes 页数：21 Pages

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

文件：163.37 Kbytes 页数：21 Pages

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

文件：163.37 Kbytes 页数：21 Pages

ISSI

矽成半导体