IS41LV8200规格书应用电路供应价格ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV8200	文件：159.03 Kbytes Page：18 Pages	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 文件：159.03 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS41LV8200-50J	文件：159.03 Kbytes Page：18 Pages	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 文件：159.03 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS41LV8200-50JI	文件：159.03 Kbytes Page：18 Pages	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 文件：159.03 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS41LV8200-60J	文件：159.03 Kbytes Page：18 Pages	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 文件：159.03 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS41LV8200-60JI	文件：159.03 Kbytes Page：18 Pages	2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 文件：159.03 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41LV8200
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
2M x 8(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳庞田科技有限公司	IS41LV8200-50J	BSI	2023+环保现货	SOJ28	8500	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市一线半导体有限公司	IS41LV8205-60J	ISSI	24+	SOJ-28	24		询价
深圳市晨豪科技有限公司	IS41LV8205-60J	ISSI	23+	SOJ	89630	当天发货全新原装现货	询价
深圳市赛尔通科技有限公司	IS41LV8205A60J	ISS	23+		65480		询价
深圳市华来深电子有限公司	IS41LV8205A-60J	ISSI	23+	SOJ	8560	受权代理!全新原装现货特价热卖!	询价
深圳市安富世纪电子有限公司	IS41LV8205A-60J	ISSI	23+	SOJ	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	IS41LV8205A-60J	ISSI	23+	SOJ-28	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	IS41LV8205A-60J	ISSI	0423+	SOJ	1670	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市诺美思科技有限公司	IS41LV8205A-60J	ISSI		原厂封装	9800	原装进口公司现货假一赔百	询价
上海鑫科润电子科技有限公司	IS41LV85125-60K	ISSI	0343+	SOJ	278	原装现货海量库存欢迎咨询	询价

更多IS41LV8200供应商更新时间2024-3-26 15:06:00

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