IS41LV16400-60TE中文资料北京矽成数据手册PDF规格书

DESCRIPTION

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16400 ideal for use in 16-bit wide data bus systems.

FEATURES

• Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval: 4,096 cycles / 64 ms

• Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden

• Low Standby power dissipation:

– 1.8mW(max) CMOS Input Level

• Single power supply: 3.3V ± 10

• Byte Write and Byte Read operation via two CAS

• Extended Temperature Range -30oC to 85oC

• Industrail Temperature Range -40oC to 85oC