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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV16100-50K	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-50KI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-50T	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-50TI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-50TL	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-50TLI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-60K	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-60KI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-60T	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16100-60TI	文件：123.63 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 文件：123.63 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41L
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	IS41LV16256-60T	ISSI	2025+	TSOP-44	5000	原装进口价格优请找坤融电子!	询价
深圳市福田区绿盛电子商行	IS41LV16256-60T	ISSI	2015+	DIP/SOP	19889	一级代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	IS41LV16256-60T		24+	TSSOP	7003		询价
深圳市豪迈兴电子有限公司	IS41LV16256-60T	ISSI	2602+	SOJ	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市英卓尔科技有限公司	IS41LV16256-60T	ISSI	20+	SSOP-40	2960	诚信交易大量库存现货	询价
上海市鑫鸿达电子	IS41LV16256-60T	ISSI	2022+		158	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	IS41LV16256-60T	ISSI	24+	SOJ	65200	一级代理/放心采购	询价
艾睿（深圳）半导体有限公司	IS41LV16256-60T	ISSI	2447	SOJ	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
京海半导体(深圳)有限公司	IS41LV16256-60T	ISSI	25+	SSOP-40	10000	原装现货假一罚十	询价
深圳市恒达亿科技有限公司	IS41LV16256-60T	ISSI	25+	TSOP	4500	全新原装、诚信经营、公司现货销售	询价

更多IS41L供应商更新时间2026-9-30 11:16:00

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