IS41LV16100-50KI中文资料北京矽成数据手册PDF规格书

DESCRIPTION

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

— Self refresh Mode - 1,024 cycles / 128ms

• JEDEC standard pinout

• Single power supply:

— 5V ± 10 (IS41C16100)

— 3.3V ± 10 (IS41LV16100)

• Byte Write and Byte Read operation via two CAS

• Industrail Temperature Range -40oC to 85oC

• Lead-free available