SELF-OSCILLATING HALF-BRIDEGE DRIVER IC

Description The IRS2153(1)D is based on the popular IR2153 self oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune

文件：271.7 Kbytes 页数：12 Pages

IRF

SELF-OSCILLATING HALF-BRIDGE DRIVER IC

Description The IRS2153(1)D is based on the popular IR2153 self oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune

文件：336.73 Kbytes 页数：14 Pages

IRF

SELF-OSCILLATING HALF-BRIDGE DRIVER IC

Description The IRS2153(1)D is based on the popular IR2153 self oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune

文件：336.73 Kbytes 页数：14 Pages

IRF

SELF-OSCILLATING HALF-BRIDGE DRIVER IC

文件：363.08 Kbytes 页数：14 Pages

INFINEON

英飞凌

600 V 半桥栅极驱动器 IC，带振荡器、集成自举 FET、可编程频率和可编程关断

自激振荡 600 V 半桥驱动器 IC,具有典型的 0.18 A 拉电流和 0.26 A 灌电流，采用 8 引脚 SOIC 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 PDIP 封装可选。 • 集成 600 V 半桥栅极驱动器\n• CT, RT 可编程振荡器\n• Vcc 上的 15.4 V 齐纳箝位\n• 微功率启动\n• CT 引脚上的非锁定关断特性 (1/6th VCC)\n• 内置自举 PET\n• +/- 50 V/ns 不受 dV/dt 影响\n• 内置死区时间\n• 典型死区时间1.1 µs (IRS2153D) 或 0.6 µs (IRS21531D )\n\n优势:;

Infineon

英飞凌

Self-Oscillating Half Bridge Driver, 1.1µs Deadtime in a SO-8 package

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飞凌